Average drift mobility and apparent sheet-electron density profiles in strained-Si-SiGe buried-channel depletion-mode n-MOSFETs

Title:	Average drift mobility and apparent sheet-electron density profiles in strained-Si-SiGe buried-channel depletion-mode n-MOSFETs
Authors:	Michelakis, K Vilches, A Papavassiliou, C Despotopoulos, S Fobelets, K Toumazou, C
Item Type:	Journal Article
Content Version:	Published version
Issue Date:	1-Aug-2004
Citation:	IEEE T ELECTRON DEV Vol.( 51 ) No.( 8 ) pp 1309 - 1314
URI:	http://hdl.handle.net/10044/1/1221
Publisher Link:	http://dx.doi.org/10.1109/TED.2004.832727
DOI:	10.1109/TED.2004.832727
ISSN:	0018-9383
Start Page:	1309
End Page:	1314
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Volume:	51
Appears in Collections:	Optical and Semiconductor Devices Institute of Biomedical Engineering Circuits and Systems