800 nm process

Semiconductor device fabrication
MOSFET scaling (process nodes)
010 µm – 1971 006 µm – 1974 003 µm – 1977  1.5 µm – 1981 001 µm – 1984 800 nm – 1987 600 nm – 1990 350 nm – 1993 250 nm – 1996 180 nm – 1999 130 nm – 2001 090 nm – 2003 065 nm – 2005 045 nm – 2007 032 nm – 2009 022 nm – 2012 014 nm – 2014 010 nm – 2016 007 nm – 2018 005 nm – 2020
Future 003 nm – ~2022
Half-nodes Density CMOS Device (multi-gate) Moore's law Semiconductor Nanoelectronics

The 800 nm process refers to the level of MOSFET semiconductor fabrication process technology that was reached around the 1987–1990 timeframe, by leading semiconductor companies like NTT, NEC, Toshiba, IBM, Hitachi, Matsushita, Mitsubishi Electric and Intel.

Products featuring 0.8 μm manufacturing process

• NTT introduced the 800 nm CMOS process for its 1 Mbit DRAM memory chip in 1984.
• IBM's Bijan Davari developed high-performance, low-voltage, deep sub-micron CMOS technology in the mid-1980s, which enabled the development of faster computers as well as portable computers and battery-powered handheld electronics.
• NEC and Toshiba used this process for their 4 Mbit DRAM memory chips in 1986.
• Hitachi, IBM, Matsushita and Mitsubishi Electric used this process for their 4 Mbit DRAM memory chips in 1987.
• Toshiba used the process for their 4 Mbit EPROM memory chip in 1987.
• Hitachi, Mitsubishi and Toshiba used this process for their 1 Mbit SRAM memory chips in 1987.
• Intel 80486 CPU, launched in 1989, was manufactured using this process.
• Intel i960CA CPU, announced in 1989, used this process.
• microSPARC I launched in 1992.
• First Intel P5 Pentium CPUs at 60 MHz and 66 MHz launched in 1993. (BiCMOS)

References

Preceded by 1 μm

CMOS manufacturing processes

Succeeded by 600 nm