EPROM live stage clip

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• published: 05 Apr 2010
• views: 553

Eprom is known for his diverse, funky and energetic sets, which cross the lines between live remixing and manipulation of hiphop and dubstep with his own obscenely bass-heavy neurocrunk transmissions. Eprom has played alongside artists like Flying Lotus, The Glitch Mob, Skream, Lazer Sword, Kode9, Mochipet, Rustie, and many others. Eprom has worked with internationally renowned MCs and has slated multiple vinyl releases in the coming year. DJ supporters include Starkey, Jakes, Bassnectar, The Glitch Mob, Rustie, Megasoid, Zombie Disco Squad, Riton, Basement Jaxx, and BBC Radio One’s Mary Anne Hobbs. Independent electronic artist from Vancouver, Canada, and collaborating with hip-hop group Low pros in Toronto Canada, while containing several different styles in his music many of his remixes make appreciable use chiptune style sound Affiliations: Surefire, Black Acre, Cloak x Dagger An EPROM (rarely EROM), or erasable programmable read only memory, is a type of memory chip that retains its data when its power supply is switched off. In other words, it is non-volatile. It is an array of floating-gate transistors individually programmed by an electronic device that supplies higher voltages than those normally used in digital circuits. Once programmed, an EPROM can be erased by exposing it to strong ultraviolet light from a mercury-vapor light source. EPROMs are easily recognizable by the transparent fused quartz window in the top of the package, through which the silicon chip is visible, and which permits exposure to UV light during erasing. Development of the EPROM memory cell started with investigation of faulty integrated circuits where the gate connections of transistors had broken. Stored charge on these isolated gates changed their properties. The EPROM was invented by Dov Frohman of Intel in 1971, who was awarded US patent 3660819 in 1972. A cross-section of a floating-gate transistor Each storage location of an EPROM consists of a single field-effect transistor. Each field-effect transistor consists of a channel in the semiconductor body of the device. Source and drain contacts are made to regions at the end of the channel. An insulating layer of oxide is grown over the channel, then a conductive (silicon or aluminum) gate electrode is deposited, and a further thick layer of oxide is deposited over the gate electrode. The floating gate electrode has no connections to other parts of the integrated circuit and is completely insulated by the surrounding layers of oxide. A control gate electrode is deposited and further oxide covers it. To retrieve data from the EPROM, the address represented by the values at the address pins of the EPROM is decoded and used to connect one word (usually an 8-bit byte) of storage to the output buffer amplifiers. Each bit of the word is a 1 or 0, depending on the storage transistor being switched on or off, conducting or non-conducting. The switching state of the field-effect transistor is controlled by the voltage on the control gate of the transistor. Presence of a voltage on this gate creates a conductive channel in the transistor, switching it on. In effect, the stored charge on the floating gate allows the threshold voltage of the transistor to be programmed. Storing data in the memory requires selecting a given address and applying a higher voltage to the transistors. This creates an avalanche discharge of electrons, which have enough energy to pass through the insulating oxide layer and accumulate on the gate electrode. When the high voltage is removed, the electrons are trapped on the electrode. Because of the high insulation value of the silicon oxide surrounding the gate, the stored charge cannot readily leak away and the data can be retained for decades. Unlike EEPROMs, the programming process is not electrically reversible. To erase the data stored in the array of transistors, ultraviolet light is directed onto the die. Photons of the UV light cause ionization within the silicon oxide, which allow the stored charge on the floating gate to dissipate. Since the whole memory array is exposed, all the memory is erased at the same time. The process takes several minutes for UV lamps of convenient sizes; sunlight would erase a chip in weeks, and indoor fluorescent lighting over several years. Generally the EPROMs must be removed from equipment to be erased, since it's not usually practical to build in a UV lamp to erase parts in-circuit. As the quartz window is expensive to make, OTP (one-time programmable) chips were introduced; here, the die is mounted in an opaque package so it cannot be erased after programming - this also eliminates the need to test the erase function, further reducing cost. OTP versions of both EPROMs and EPROM-based microcontrollers are manufactured. However, OTP EPROM (whether separate or part of a larger chip) is being increasingly replaced by EEPROM for small amounts where the cell cost isn't too important and flash for larger amounts

Quasiparticles and Semiconducting Devices - Mandar Deshmukh, Tata Institute of Fundamental Research

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• published: 13 Apr 2013
• views: 69

Semiconducting Nanowire Field Effect Transistor for Nanoelectronics and Nanomechanics Mandar Deshmukh, Tata Institute of Fundamental Research Semiconducting nanowire transistors offer an interesting avenue to realize new device architecture for transistors beyond the silicon era. As transistors are scaled down several challenges present themselves and there is a need to explore new materials and device architectures to overcome these difficulties. I will present our efforts to develop a simple technique for lateral nanowire wrap around gate devices with high capacitive coupling. This wrap around gate electrode completely surrounds the channel and allows efficient tuning of the transistors without degrading the mobility of electrons. Such a device is of interest for technological applications as well as to explore how the electrons flow through confined nanostructures when quantum mechanical effects are felt in subtle but perceptible ways. A nanoscale “guitar string” made using suspended semiconducting nanowire transistor can also be used to understand how the flow of electrons can affect the mechanical vibrations of the “guitar string”. Such studies allow us to design sensitive nanoscale electromechanical devices that can detect charges and also to quantitatively understand the temperature profile inside nanoscale transistors. This work is supported by the Government of India and partially supported by IBM India and AOARD Tokyo.

EPROM live stage clip

• Report rights infringement
• published: 05 Apr 2010
• views: 553

Eprom is known for his diverse, funky and energetic sets, which cross the lines between live remixing and manipulation of hiphop and dubstep with his own obscenely bass-heavy neurocrunk transmissions. Eprom has played alongside artists like Flying Lotus, The Glitch Mob, Skream, Lazer Sword, Kode9, Mochipet, Rustie, and many others. Eprom has worked with internationally renowned MCs and has slated multiple vinyl releases in the coming year. DJ supporters include Starkey, Jakes, Bassnectar, The Glitch Mob, Rustie, Megasoid, Zombie Disco Squad, Riton, Basement Jaxx, and BBC Radio One’s Mary Anne Hobbs. Independent electronic artist from Vancouver, Canada, and collaborating with hip-hop group Low pros in Toronto Canada, while containing several different styles in his music many of his remixes make appreciable use chiptune style sound Affiliations: Surefire, Black Acre, Cloak x Dagger An EPROM (rarely EROM), or erasable programmable read only memory, is a type of memory chip that retains its data when its power supply is switched off. In other words, it is non-volatile. It is an array of floating-gate transistors individually programmed by an electronic device that supplies higher voltages than those normally used in digital circuits. Once programmed, an EPROM can be erased by exposing it to strong ultraviolet light from a mercury-vapor light source. EPROMs are easily recognizable by the transparent fused quartz window in the top of the package, through which the silicon chip is visible, and which permits exposure to UV light during erasing. Development of the EPROM memory cell started with investigation of faulty integrated circuits where the gate connections of transistors had broken. Stored charge on these isolated gates changed their properties. The EPROM was invented by Dov Frohman of Intel in 1971, who was awarded US patent 3660819 in 1972. A cross-section of a floating-gate transistor Each storage location of an EPROM consists of a single field-effect transistor. Each field-effect transistor consists of a channel in the semiconductor body of the device. Source and drain contacts are made to regions at the end of the channel. An insulating layer of oxide is grown over the channel, then a conductive (silicon or aluminum) gate electrode is deposited, and a further thick layer of oxide is deposited over the gate electrode. The floating gate electrode has no connections to other parts of the integrated circuit and is completely insulated by the surrounding layers of oxide. A control gate electrode is deposited and further oxide covers it. To retrieve data from the EPROM, the address represented by the values at the address pins of the EPROM is decoded and used to connect one word (usually an 8-bit byte) of storage to the output buffer amplifiers. Each bit of the word is a 1 or 0, depending on the storage transistor being switched on or off, conducting or non-conducting. The switching state of the field-effect transistor is controlled by the voltage on the control gate of the transistor. Presence of a voltage on this gate creates a conductive channel in the transistor, switching it on. In effect, the stored charge on the floating gate allows the threshold voltage of the transistor to be programmed. Storing data in the memory requires selecting a given address and applying a higher voltage to the transistors. This creates an avalanche discharge of electrons, which have enough energy to pass through the insulating oxide layer and accumulate on the gate electrode. When the high voltage is removed, the electrons are trapped on the electrode. Because of the high insulation value of the silicon oxide surrounding the gate, the stored charge cannot readily leak away and the data can be retained for decades. Unlike EEPROMs, the programming process is not electrically reversible. To erase the data stored in the array of transistors, ultraviolet light is directed onto the die. Photons of the UV light cause ionization within the silicon oxide, which allow the stored charge on the floating gate to dissipate. Since the whole memory array is exposed, all the memory is erased at the same time. The process takes several minutes for UV lamps of convenient sizes; sunlight would erase a chip in weeks, and indoor fluorescent lighting over several years. Generally the EPROMs must be removed from equipment to be erased, since it's not usually practical to build in a UV lamp to erase parts in-circuit. As the quartz window is expensive to make, OTP (one-time programmable) chips were introduced; here, the die is mounted in an opaque package so it cannot be erased after programming - this also eliminates the need to test the erase function, further reducing cost. OTP versions of both EPROMs and EPROM-based microcontrollers are manufactured. However, OTP EPROM (whether separate or part of a larger chip) is being increasingly replaced by EEPROM for small amounts where the cell cost isn't too important and flash for larger amounts

Quasiparticles and Semiconducting Devices - Mandar Deshmukh, Tata Institute of Fundamental Research

• Report rights infringement
• published: 13 Apr 2013
• views: 69

Semiconducting Nanowire Field Effect Transistor for Nanoelectronics and Nanomechanics Mandar Deshmukh, Tata Institute of Fundamental Research Semiconducting nanowire transistors offer an interesting avenue to realize new device architecture for transistors beyond the silicon era. As transistors are scaled down several challenges present themselves and there is a need to explore new materials and device architectures to overcome these difficulties. I will present our efforts to develop a simple technique for lateral nanowire wrap around gate devices with high capacitive coupling. This wrap around gate electrode completely surrounds the channel and allows efficient tuning of the transistors without degrading the mobility of electrons. Such a device is of interest for technological applications as well as to explore how the electrons flow through confined nanostructures when quantum mechanical effects are felt in subtle but perceptible ways. A nanoscale “guitar string” made using suspended semiconducting nanowire transistor can also be used to understand how the flow of electrons can affect the mechanical vibrations of the “guitar string”. Such studies allow us to design sensitive nanoscale electromechanical devices that can detect charges and also to quantitatively understand the temperature profile inside nanoscale transistors. This work is supported by the Government of India and partially supported by IBM India and AOARD Tokyo.