- published: 12 Jun 2012
- views: 17112
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Ion implantation is one of the fundamental processes used to make microchips. Raw silicon is neither a perfect insulator nor a perfect conductor. It's somewhere in the middle. Inserting a smattering of boron or phosphorus atoms into the silicon crystal lattice allows us to control the flow of electricity through the silicon and make transistors -- the building block from which we make chips.
In this two-part video features Jim Kawski from Applied's Varian Semiconductor Equipment business unit, discussing why we need ion implantation, what the process looks like at the atomic level and how an actual implanter works. In the second part, Jim goes on to explore how implant is used to make actual semiconductor devices.
Processing of Semiconducting Materials by Dr. Pallab Banerji,Department of Metallurgy and Material Science,IIT Kharagpur.For more details on NPTEL visit http://nptel.ac.in
- published: 04 Feb 2014
- views: 876
"Plasma-immersion ion implantation" or pulsed-plasma doping is a surface modification technique of extracting the accelerated ions from the plasma by applying a high voltage pulsed DC or pure DC power supply and targeting them into a suitable substrate or electrode with a semiconductor wafer placed over it, so as to implant it with suitable dopants. The electrode is a cathode for an electropositive plasma, while it is an anode for an electronegative plasma. Plasma can be generated in a suitably designed vacuum chamber with the help of various plasma sources such as Electron Cyclotron Resonance plasma source which yields plasma with the highest ion density and lowest contamination level, helicon plasma source, capacitively coupled plasma source, inductively coupled plasma source, DC glow discharge and metal vapor arc . The vacuum chamber can be of two types - "diode" and "triode" type depending upon whether the power supply is applied to the substrate as in the former case or to the perforated grid as in the latter.
In a conventional "immersion" type of PIII system, also called as the "diode" type configuration, the wafer is kept at a negative potential since the positively charged ions of the electropositive plasma are the ones who get extracted and implanted. The wafer sample to be treated is placed on a sample holder in a vacuum chamber. The sample holder is connected to a high voltage power supply and is electrically insulated from the chamber wall. By means of pumping and gas feed systems, an atmosphere of a working gas at a suitable pressure is created.
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Background Music:
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This video uses material/images from https://en.wikipedia.org/wiki/Plasma-immersion+ion+implantation, which is released under Creative Commons Attribution-Share-Alike License 3.0 http://creativecommons.org/licenses/by-sa/3.0/ . This video is licensed under Creative Commons Attribution-Share-Alike License 3.0 http://creativecommons.org/licenses/by-sa/3.0/ . To reuse/adapt the content in your own work, you must comply with the license terms.
- published: 10 Sep 2015
- views: 532
Ion implantation
Ion implantation is a materials engineering process by which ions of a material are accelerated in an electrical field and impacted into a solid. This process is used to change the physical, chemical, or electrical properties of the solid. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as various applications in materials science research. The ions alter the elemental composition of the target (if the ions differ in composition from the target), stopping in the target and staying there. They also cause many chemical and physical changes in the target by transferring their energy and momentum to the electrons and atomic nuclei of the target material. This causes a structural change, in that the crystal structure of the target can be damaged or even destroyed by the energetic collision cascades. Because the ions have masses comparable to those of the target atoms, they knock the target atoms out of place more than electron beams do. If the ion energy is sufficiently high (usually tens of MeV) to overcome the coulomb barrier, there can even be a small amount of nuclear transmutation.
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12:47Ion Implantation 101 -- Part 1
Ion Implantation 101 -- Part 1Ion Implantation 101 -- Part 1
Ion implantation is one of the fundamental processes used to make microchips. Raw silicon is neither a perfect insulator nor a perfect conductor. It's somewhere in the middle. Inserting a smattering of boron or phosphorus atoms into the silicon crystal lattice allows us to control the flow of electricity through the silicon and make transistors -- the building block from which we make chips. In this two-part video features Jim Kawski from Applied's Varian Semiconductor Equipment business unit, discussing why we need ion implantation, what the process looks like at the atomic level and how an actual implanter works. In the second part, Jim goes on to explore how implant is used to make actual semiconductor devices. -
20:02Lecture 16 (CHE 323) Ion Implantation, part 1
Lecture 16 (CHE 323) Ion Implantation, part 1Lecture 16 (CHE 323) Ion Implantation, part 1
Ion Implantation, part 1 -
57:19Mod-01 Lec-07 Diffusion and Ion Implantation - I
Mod-01 Lec-07 Diffusion and Ion Implantation - IMod-01 Lec-07 Diffusion and Ion Implantation - I
Processing of Semiconducting Materials by Dr. Pallab Banerji,Department of Metallurgy and Material Science,IIT Kharagpur.For more details on NPTEL visit http://nptel.ac.in -
2:04Plasma-immersion ion implantation - Video Learning - WizScience.com
Plasma-immersion ion implantation - Video Learning - WizScience.comPlasma-immersion ion implantation - Video Learning - WizScience.com
"Plasma-immersion ion implantation" or pulsed-plasma doping is a surface modification technique of extracting the accelerated ions from the plasma by applying a high voltage pulsed DC or pure DC power supply and targeting them into a suitable substrate or electrode with a semiconductor wafer placed over it, so as to implant it with suitable dopants. The electrode is a cathode for an electropositive plasma, while it is an anode for an electronegative plasma. Plasma can be generated in a suitably designed vacuum chamber with the help of various plasma sources such as Electron Cyclotron Resonance plasma source which yields plasma with the highest ion density and lowest contamination level, helicon plasma source, capacitively coupled plasma source, inductively coupled plasma source, DC glow discharge and metal vapor arc . The vacuum chamber can be of two types - "diode" and "triode" type depending upon whether the power supply is applied to the substrate as in the former case or to the perforated grid as in the latter. In a conventional "immersion" type of PIII system, also called as the "diode" type configuration, the wafer is kept at a negative potential since the positively charged ions of the electropositive plasma are the ones who get extracted and implanted. The wafer sample to be treated is placed on a sample holder in a vacuum chamber. The sample holder is connected to a high voltage power supply and is electrically insulated from the chamber wall. By means of pumping and gas feed systems, an atmosphere of a working gas at a suitable pressure is created. Wiz Science™ is "the" learning channel for children and all ages. SUBSCRIBE TODAY Disclaimer: This video is for your information only. The author or publisher does not guarantee the accuracy of the content presented in this video. USE AT YOUR OWN RISK. Background Music: "The Place Inside" by Silent Partner (royalty-free) from YouTube Audio Library. This video uses material/images from https://en.wikipedia.org/wiki/Plasma-immersion+ion+implantation, which is released under Creative Commons Attribution-Share-Alike License 3.0 http://creativecommons.org/licenses/by-sa/3.0/ . This video is licensed under Creative Commons Attribution-Share-Alike License 3.0 http://creativecommons.org/licenses/by-sa/3.0/ . To reuse/adapt the content in your own work, you must comply with the license terms. Wiz Science™ is "the" learning channel for children and all ages. SUBSCRIBE TODAY Disclaimer: This video is for your information only. The author or publisher does not guarantee the accuracy of the content presented in this video. USE AT YOUR OWN RISK. Background Music: "The Place Inside" by Silent Partner (royalty-free) from YouTube Audio Library. This video uses material/images from https://en.wikipedia.org/wiki/Plasma-immersion+ion+implantation, which is released under Creative Commons Attribution-Share-Alike License 3.0 http://creativecommons.org/licenses/by-sa/3.0/ . This video is licensed under Creative Commons Attribution-Share-Alike License 3.0 http://creativecommons.org/licenses/by-sa/3.0/ . To reuse/adapt the content in your own work, you must comply with the license terms.
-
Ion Implantation 101 -- Part 1
Ion implantation is one of the fundamental processes used to make microchips. Raw silicon is neither a perfect insulator nor a perfect conductor. It's somewhere in the middle. Inserting a smattering of boron or phosphorus atoms into the silicon crystal lattice allows us to control the flow of electricity through the silicon and make transistors -- the building block from which we make chips. In this two-part video features Jim Kawski from Applied's Varian Semiconductor Equipment business unit, discussing why we need ion implantation, what the process looks like at the atomic level and how an actual implanter works. In the second part, Jim goes on to explore how implant is used to make actual semiconductor devices.
published: 12 Jun 2012 -
Lecture 16 (CHE 323) Ion Implantation, part 1
Ion Implantation, part 1
published: 16 Sep 2013 -
Mod-01 Lec-07 Diffusion and Ion Implantation - I
Processing of Semiconducting Materials by Dr. Pallab Banerji,Department of Metallurgy and Material Science,IIT Kharagpur.For more details on NPTEL visit http://nptel.ac.in
published: 04 Feb 2014 -
Plasma-immersion ion implantation - Video Learning - WizScience.com
"Plasma-immersion ion implantation" or pulsed-plasma doping is a surface modification technique of extracting the accelerated ions from the plasma by applying a high voltage pulsed DC or pure DC power supply and targeting them into a suitable substrate or electrode with a semiconductor wafer placed over it, so as to implant it with suitable dopants. The electrode is a cathode for an electropositive plasma, while it is an anode for an electronegative plasma. Plasma can be generated in a suitably designed vacuum chamber with the help of various plasma sources such as Electron Cyclotron Resonance plasma source which yields plasma with the highest ion density and lowest contamination level, helicon plasma source, capacitively coupled plasma source, inductively coupled plasma source, DC g...
published: 10 Sep 2015
Ion Implantation 101 -- Part 1
- Order: Reorder
- Duration: 12:47
- Updated: 12 Jun 2012
- views: 17112
Ion implantation is one of the fundamental processes used to make microchips. Raw silicon is neither a perfect insulator nor a perfect conductor. It's somewhere...
Ion implantation is one of the fundamental processes used to make microchips. Raw silicon is neither a perfect insulator nor a perfect conductor. It's somewhere in the middle. Inserting a smattering of boron or phosphorus atoms into the silicon crystal lattice allows us to control the flow of electricity through the silicon and make transistors -- the building block from which we make chips.
In this two-part video features Jim Kawski from Applied's Varian Semiconductor Equipment business unit, discussing why we need ion implantation, what the process looks like at the atomic level and how an actual implanter works. In the second part, Jim goes on to explore how implant is used to make actual semiconductor devices.
wn.com/Ion Implantation 101 Part 1
Ion implantation is one of the fundamental processes used to make microchips. Raw silicon is neither a perfect insulator nor a perfect conductor. It's somewhere in the middle. Inserting a smattering of boron or phosphorus atoms into the silicon crystal lattice allows us to control the flow of electricity through the silicon and make transistors -- the building block from which we make chips.
In this two-part video features Jim Kawski from Applied's Varian Semiconductor Equipment business unit, discussing why we need ion implantation, what the process looks like at the atomic level and how an actual implanter works. In the second part, Jim goes on to explore how implant is used to make actual semiconductor devices.
- published: 12 Jun 2012
- views: 17112
Lecture 16 (CHE 323) Ion Implantation, part 1
- Order: Reorder
- Duration: 20:02
- Updated: 16 Sep 2013
- views: 4679
Ion Implantation, part 1
Ion Implantation, part 1
wn.com/Lecture 16 (Che 323) Ion Implantation, Part 1
Ion Implantation, part 1
- published: 16 Sep 2013
- views: 4679
Mod-01 Lec-07 Diffusion and Ion Implantation - I
- Order: Reorder
- Duration: 57:19
- Updated: 04 Feb 2014
- views: 876
Processing of Semiconducting Materials by Dr. Pallab Banerji,Department of Metallurgy and Material Science,IIT Kharagpur.For more details on NPTEL visit http://...
Processing of Semiconducting Materials by Dr. Pallab Banerji,Department of Metallurgy and Material Science,IIT Kharagpur.For more details on NPTEL visit http://nptel.ac.in
wn.com/Mod 01 Lec 07 Diffusion And Ion Implantation I
Processing of Semiconducting Materials by Dr. Pallab Banerji,Department of Metallurgy and Material Science,IIT Kharagpur.For more details on NPTEL visit http://nptel.ac.in
- published: 04 Feb 2014
- views: 876
Plasma-immersion ion implantation - Video Learning - WizScience.com
- Order: Reorder
- Duration: 2:04
- Updated: 10 Sep 2015
- views: 532
"Plasma-immersion ion implantation" or pulsed-plasma doping is a surface modification technique of extracting the accelerated ions from the plasma by apply...
"Plasma-immersion ion implantation" or pulsed-plasma doping is a surface modification technique of extracting the accelerated ions from the plasma by applying a high voltage pulsed DC or pure DC power supply and targeting them into a suitable substrate or electrode with a semiconductor wafer placed over it, so as to implant it with suitable dopants. The electrode is a cathode for an electropositive plasma, while it is an anode for an electronegative plasma. Plasma can be generated in a suitably designed vacuum chamber with the help of various plasma sources such as Electron Cyclotron Resonance plasma source which yields plasma with the highest ion density and lowest contamination level, helicon plasma source, capacitively coupled plasma source, inductively coupled plasma source, DC glow discharge and metal vapor arc . The vacuum chamber can be of two types - "diode" and "triode" type depending upon whether the power supply is applied to the substrate as in the former case or to the perforated grid as in the latter.
In a conventional "immersion" type of PIII system, also called as the "diode" type configuration, the wafer is kept at a negative potential since the positively charged ions of the electropositive plasma are the ones who get extracted and implanted. The wafer sample to be treated is placed on a sample holder in a vacuum chamber. The sample holder is connected to a high voltage power supply and is electrically insulated from the chamber wall. By means of pumping and gas feed systems, an atmosphere of a working gas at a suitable pressure is created.
Wiz Science™ is "the" learning channel for children and all ages.
SUBSCRIBE TODAY
Disclaimer: This video is for your information only. The author or publisher does not guarantee the accuracy of the content presented in this video. USE AT YOUR OWN RISK.
Background Music:
"The Place Inside" by Silent Partner (royalty-free) from YouTube Audio Library.
This video uses material/images from https://en.wikipedia.org/wiki/Plasma-immersion+ion+implantation, which is released under Creative Commons Attribution-Share-Alike License 3.0 http://creativecommons.org/licenses/by-sa/3.0/ . This video is licensed under Creative Commons Attribution-Share-Alike License 3.0 http://creativecommons.org/licenses/by-sa/3.0/ . To reuse/adapt the content in your own work, you must comply with the license terms.
Wiz Science™ is "the" learning channel for children and all ages.
SUBSCRIBE TODAY
Disclaimer: This video is for your information only. The author or publisher does not guarantee the accuracy of the content presented in this video. USE AT YOUR OWN RISK.
Background Music:
"The Place Inside" by Silent Partner (royalty-free) from YouTube Audio Library.
This video uses material/images from https://en.wikipedia.org/wiki/Plasma-immersion+ion+implantation, which is released under Creative Commons Attribution-Share-Alike License 3.0 http://creativecommons.org/licenses/by-sa/3.0/ . This video is licensed under Creative Commons Attribution-Share-Alike License 3.0 http://creativecommons.org/licenses/by-sa/3.0/ . To reuse/adapt the content in your own work, you must comply with the license terms.
wn.com/Plasma Immersion Ion Implantation Video Learning Wizscience.Com
"Plasma-immersion ion implantation" or pulsed-plasma doping is a surface modification technique of extracting the accelerated ions from the plasma by applying a high voltage pulsed DC or pure DC power supply and targeting them into a suitable substrate or electrode with a semiconductor wafer placed over it, so as to implant it with suitable dopants. The electrode is a cathode for an electropositive plasma, while it is an anode for an electronegative plasma. Plasma can be generated in a suitably designed vacuum chamber with the help of various plasma sources such as Electron Cyclotron Resonance plasma source which yields plasma with the highest ion density and lowest contamination level, helicon plasma source, capacitively coupled plasma source, inductively coupled plasma source, DC glow discharge and metal vapor arc . The vacuum chamber can be of two types - "diode" and "triode" type depending upon whether the power supply is applied to the substrate as in the former case or to the perforated grid as in the latter.
In a conventional "immersion" type of PIII system, also called as the "diode" type configuration, the wafer is kept at a negative potential since the positively charged ions of the electropositive plasma are the ones who get extracted and implanted. The wafer sample to be treated is placed on a sample holder in a vacuum chamber. The sample holder is connected to a high voltage power supply and is electrically insulated from the chamber wall. By means of pumping and gas feed systems, an atmosphere of a working gas at a suitable pressure is created.
Wiz Science™ is "the" learning channel for children and all ages.
SUBSCRIBE TODAY
Disclaimer: This video is for your information only. The author or publisher does not guarantee the accuracy of the content presented in this video. USE AT YOUR OWN RISK.
Background Music:
"The Place Inside" by Silent Partner (royalty-free) from YouTube Audio Library.
This video uses material/images from https://en.wikipedia.org/wiki/Plasma-immersion+ion+implantation, which is released under Creative Commons Attribution-Share-Alike License 3.0 http://creativecommons.org/licenses/by-sa/3.0/ . This video is licensed under Creative Commons Attribution-Share-Alike License 3.0 http://creativecommons.org/licenses/by-sa/3.0/ . To reuse/adapt the content in your own work, you must comply with the license terms.
Wiz Science™ is "the" learning channel for children and all ages.
SUBSCRIBE TODAY
Disclaimer: This video is for your information only. The author or publisher does not guarantee the accuracy of the content presented in this video. USE AT YOUR OWN RISK.
Background Music:
"The Place Inside" by Silent Partner (royalty-free) from YouTube Audio Library.
This video uses material/images from https://en.wikipedia.org/wiki/Plasma-immersion+ion+implantation, which is released under Creative Commons Attribution-Share-Alike License 3.0 http://creativecommons.org/licenses/by-sa/3.0/ . This video is licensed under Creative Commons Attribution-Share-Alike License 3.0 http://creativecommons.org/licenses/by-sa/3.0/ . To reuse/adapt the content in your own work, you must comply with the license terms.
- published: 10 Sep 2015
- views: 532
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12:47
Ion Implantation 101 -- Part 1
Ion implantation is one of the fundamental processes used to make microchips. Raw silicon ...
published: 12 Jun 2012
Ion Implantation 101 -- Part 1
Ion Implantation 101 -- Part 1
- Report rights infringement
- published: 12 Jun 2012
- views: 17112
20:02
Lecture 16 (CHE 323) Ion Implantation, part 1
Ion Implantation, part 1
published: 16 Sep 2013
Lecture 16 (CHE 323) Ion Implantation, part 1
Lecture 16 (CHE 323) Ion Implantation, part 1
- Report rights infringement
- published: 16 Sep 2013
- views: 4679
57:19
Mod-01 Lec-07 Diffusion and Ion Implantation - I
Processing of Semiconducting Materials by Dr. Pallab Banerji,Department of Metallurgy and ...
published: 04 Feb 2014
Mod-01 Lec-07 Diffusion and Ion Implantation - I
Mod-01 Lec-07 Diffusion and Ion Implantation - I
- Report rights infringement
- published: 04 Feb 2014
- views: 876
2:04
Plasma-immersion ion implantation - Video Learning - WizScience.com
"Plasma-immersion ion implantation" or pulsed-plasma doping is a surface modification...
published: 10 Sep 2015
Plasma-immersion ion implantation - Video Learning - WizScience.com
Plasma-immersion ion implantation - Video Learning - WizScience.com
- Report rights infringement
- published: 10 Sep 2015
- views: 532
Ion Implantation 101 -- Part 1...
Lecture 16 (CHE 323) Ion Implantation, part 1...
Mod-01 Lec-07 Diffusion and Ion Implantation - I...
Plasma-immersion ion implantation - Video Learning...
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Edit Canada Dot Com 03 Oct 2016
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Edit Inquisitr 03 Oct 2016
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Edit The National 02 Oct 2016
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