Gallium Arsenide GaAs crystal for quantum optoelectronics sales@dmphotonics.com

• published: 05 Nov 2014
• views: 2

Gallium Arsenide GaAs crystal sales@dmphotonics.com Featured customer: Quantum Optoelectronics group (Prof. J.Faist) Quantum Optoelectronics Group This laboratory is dedicated to the manufacture and study of large quantum systems (also called mesoscopic systems). By nature, these systems are at the frontier between classical and quantum mechanics. Researchers are entering the mesoscopic world when trying for example to miniaturize transistors inside computer chips or to control DNA. Mesoscopic systems also open new functionalities impossible to obtain from purely classical objects: researchers around the world are trying to construct a quantum computer which could in principle solve mathematically hard problems (like the factorization of large numbers) that classical computers could not tackle. The present work of the laboratory is dedicated to the study of structures like the quantum cascade laser. The Quantum Cascade Laser (QCL) is a semiconductor laser involving only one type of carriers and which is based on two fundamental phenomena of quantum mechanics, namely tunneling and quantum confinement. It is fabricated by a technique called Molecular Beam Epitaxy in which the layers are "sprayed" one layer at the time. Single Crystal Substrates Most of microelectronic and optoelectronic devices are based on application of single crystal substrates on which thin films and structures with special properties are created using methods of epitaxial groth, ion implantation etc. Such structures have versatile applications including: light emitting structures; magnetooptic films; high temperature superconductors; optical waveguides; optical radiation receivers; acoustoelectronic devices; THz band generators/receivers; photolithographic systems; Del Mar Photonics offers variety of single crystal substrates for R&D; and OEM applications (request a quote): Oxide crystals: SiO2, MgO, TiO2, TeO2, ZnO, SrTiO3, LiNbO3, LiTaO3 (request a quote) AII–BVI and AIII–BV crystals: ZnS, ZnSe, ZnTe, CdTe, CdS, GaP, GaAs (request a quote) Garnet Crystals: GGG, YAG, GSGG (request a quote) Substrates are produced according to customer’s specifications with sizes from 5 x 5 mm to 100 x 100 mm and thickness from 0.05 to 5 mm (max. and min. size depend on material type). The following parameters are provided: Surface quality – up to 10/5 S/D Surface roughness – 5 – 15 A (depending on material) Parallelism 2” Thickness tolerance – up to 0.5 mm Orientation tolerance – up to 1 arc.min http://www.dmphotonics.com/Single%20Crystal%20Substrates/AII%E2%80%93BVI%20and%20AIII%E2%80%93BV%20crystals%20ZnS,%20ZnSe,%20ZnTe,%20CdTe,%20CdS,%20GaP,%20GaAs.htm CdS CdSe CdTe CdTe doped CdZnTe ZnS ZnSe ZnSe polycrystalline targets ZnSe:Te ZnSe with different dopants ZnTe Mn- & V-doped II-VI compound crystals Cr-doped II-VI compound crystals GaSe PbS, PbSe, PbTe Bi2Se3, Bi2Te3 CdWO4 NaBi(WO4)2 http://www.dmphotonics.com/Crystals_LPC/Cadmium%20Selenide%20(CdSe)%20crystals.htm